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(11)    Patent No :    AP 2180    (73) Applicant(s)       
(21)    Application No :    AP/P/2006/003507    UNIVERSITY OF JOHANNESBURG, Cnr. Kingsway and       
            University Roads, Auckland Park, Johannesburg, 2006,       
                   
(22)    Filing Date :    13.08.2004    South Africa       
(24)    Date of Grant &    29.11.2010           
                   
(45)    Publication :

(30)    Priority Data            (72) Inventors   
    (33) Country    (31) Number    (32) Date    ALBERTS Vivian, South Africa   
    ZA    2003/6316    14.08.2003           
    ZA    2004/2497    30.03.2004    (74) Representative   
(84)    Designated State           
    BW  GH   NA            HONEY & BLANCKENBERG   
                   
(51)    International    Classification    H01L 31/032 (2006.01)    H01L 31/18 (2006.01)   
            H01L 31/0264 (2006.01)       

(54)    Title

Group I-III-VI quaternary or higher alloy semiconductor films

(57)    Abstract

This invention relates to group IB-IIIA.VIA quaternary or higher alloys. More particularly, this invention relations to group IB-IIIA-VIA quaternary or pentenary alloys which are suitable for use as semiconductor films. More specifically the invention relates to quaternary or pentenary alloys which are substantially homogeneous and are characterized by an x-ray diffraction pattern (XRD) having a main [112] peak at a 2 ? angle (2 ? (112)) of from 26° to 28° for Cu radiation at 40kV, wherein a glancing incidence x-ray diffraction pattern (GIXRD) for a glancing angle of from 0.2° to 10° reflects an absolute shift in the 2?(112) angle of less than 0.06°.

(56)    Documents Cited : OHASHI D ET AL: "IMPROVED CIGS THIN-FILM SOLAR CELLS BY SURFACE SULFURIZATION

USING IN2S3 AND SULFUR VAPOUR" SOLAR ENERGY MATERIALS AND SOLAR CELLS.,
ELSEIER SCIENCE PUBLISHERS, AMSTERDAM, NL

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